Error detection/correction and fault detection/recovery – Pulse or data error handling – Replacement of memory spare location – portion – or segment
Reexamination Certificate
2004-07-15
2008-10-28
Perveen, Rehana (Department: 2117)
Error detection/correction and fault detection/recovery
Pulse or data error handling
Replacement of memory spare location, portion, or segment
C714S718000
Reexamination Certificate
active
07444557
ABSTRACT:
A memory not only uses redundant cells but also redundant references to reduce the likelihood of a failure. In one approach a failure in a reference can cause both the primary cell as well as the redundant cell to be ineffective. To overcome this potential problem two references for each bit are employed. In one form, the primary cell of a first bit is compared to one reference and the redundant cell of the first bit is compared to another reference. The primary and redundant cell of a second bit can use these two references as well. In another aspect, two references are placed in parallel for both the primary and redundant cell of the bit.
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Hoefler Alexander B.
Qureshi Qadeer A.
Clingan, Jr. James L.
Freescale Semiconductor Inc.
Gandhi Dipakkumar
King Robert L.
Perveen Rehana
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