Memory with EEPROM cell having capacitive effect and method for

Details Memory with EEPROM cell having capacitive effect and method for Memory with EEPROM cell having capacitive effect and method for

1996-04-09

1998-02-24

Jackson, Jerome

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257317, 257321, 36118526, 36118528, H01L 29788

Patent

active

057214409

ABSTRACT:
In a memory cell of an EEPROM or flash-EEPROM memory, the source and the drain of a floating-gate transistor forming the non-volatile memorizing device are connected together. It is shown that the capacitive behavior of the cell is then differentiated at the time of the reading depending on whether it is in a programmed state or in an erased state. This difference in behavior is used to differentiate the logic states.

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