Memory with bit line discharge circuit elements

Details Memory with bit line discharge circuit elements Memory with bit line discharge circuit elements

1997-09-30

1999-07-20

Mai, Son

Static information storage and retrieval

Read/write circuit

Accelerating charge or discharge

365203, G11C 700

Patent

active

059264250

ABSTRACT:
A memory which solves a problem of a conventional memory in that it was difficult for the conventional memory to shorten the fall time of its output signal without increasing its size. The number of paths is increased for discharging each of read bit lines by connecting to each of the read bit lines one or more additional transistors for discharging the read bit line, and by utilizing the transistors associated with other read bit line or lines to discharge the particular read bit line. The additional transistors can be provided between the existing transistors. This makes it possible to shorten the discharge time without increasing the size of the memory.

REFERENCES:
patent: 5079742 (1992-01-01), Simpson
patent: 5388078 (1995-02-01), Arakawa
patent: 5535160 (1996-07-01), Yamaguchi
patent: 5703820 (1997-12-01), Kohno
patent: 5757709 (1998-05-01), Suminaga et al.

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