Memory voltage generating circuit

Details Memory voltage generating circuit Memory voltage generating circuit

2006-05-24

2008-08-05

Hoang, Huan (Department: 2827)

Static information storage and retrieval

Read/write circuit

Including reference or bias voltage generator

C365S229000

Reexamination Certificate

active

07408816

ABSTRACT:
A memory voltage generating circuit includes a first control module, a core circuit, and a second control module. The core circuit includes a regulation amplifier, a first MOSFET, a second MOSFET, and a switch. An output terminal and an inverting input terminal of the regulation amplifier are both connected to an output terminal of the core circuit. A non-inverting input terminal of the regulation amplifier is coupled to the second control module. The non-inverting input terminal of the regulation amplifier is also connected to a referenced voltage via one resistor and is grounded via another resistor. A source of the first MOSFET is coupled to the inverting input terminal of the regulation amplifier. A gate of the first MOSFET is connected to the output terminal of the regulation amplifier. Drains of the first MOSFET and the second MOSFET are coupled to an input voltage via the switch. A source of the second MOSFET is connected to another input voltage. A gate of the second MOSFET is connected to the first control module.

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ON Semiconductor, Linear & Switching Voltage Regulator Handbook, Feb. 2002, ON Semiconducto, HB206/D Rev. 4, Feb. 2002, pp. 13, 14, 17.
Kevin W. Kobayashi, An InP HBT Common-Base Amplifier with Tunable Transimpedance for 40 GB/S Applications, Aug. 2002, Sirenza Microdevices.
Peter Hazucha et al., Area-Efficient Linear Regulator With Ultra-Fast Regulation, Apr. 2005, IEEE Jurnal of Solid State Circuits, vol. 40, No. 4.

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