Static information storage and retrieval – Read/write circuit – Including reference or bias voltage generator
Reexamination Certificate
2008-07-22
2008-07-22
Hoang, Huan (Department: 2827)
Static information storage and retrieval
Read/write circuit
Including reference or bias voltage generator
C365S230050, C365S226000
Reexamination Certificate
active
11685314
ABSTRACT:
A memory unit that is capable of operating in a desired operation condition with less power consumption, and a semiconductor device using the memory unit. The memory circuit comprises a cell array in which a plurality of memory cells is arranged, a driver circuit, a plurality of selection circuits each of which includes a memory circuit, and a power source circuit. A plurality of potentials is supplied to each of plurality of selection circuits from the power source circuit, each of plurality of selection circuits selects a potential among the plurality of potentials in accordance with data stored in each memory circuit, and the selected potential is supplied to a memory cell corresponding to each of the plurality of selection circuits among the plurality of memory cells by a signal output from the driver circuit.
REFERENCES:
patent: 5726930 (1998-03-01), Hasegawa
patent: 5737275 (1998-04-01), Matthews
patent: 6269047 (2001-07-01), Kohno
patent: 2002/0130341 (2002-09-01), Horiguchi et al.
patent: 2002/0153844 (2002-10-01), Koyama
patent: 2004/0246765 (2004-12-01), Kato
patent: 1 063 630 (2000-12-01), None
patent: 2001-005426 (2001-01-01), None
LandOfFree
Memory unit and semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Memory unit and semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Memory unit and semiconductor device will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3932182