Memory unit and semiconductor device

Details Memory unit and semiconductor device Memory unit and semiconductor device

2007-04-03

2007-04-03

Hoang, Huan (Department: 2827)

Static information storage and retrieval

Read/write circuit

Including reference or bias voltage generator

C365S230060, C365S226000

Reexamination Certificate

active

10849217

ABSTRACT:
A memory unit that is capable of operating in a desired operation condition with less power consumption, and a semiconductor device using the memory unit. The memory circuit comprises a cell array in which a plurality of memory cells is arranged, a driver circuit, a plurality of selection circuits each of which includes a memory circuit, and a power source circuit. A plurality of potentials is supplied to each of plurality of selection circuits from the power source circuit, each of plurality of selection circuits selects a potential among the plurality of potentials in accordance with data stored in each memory circuit, and the selected potential is supplied to a memory cell corresponding to each of the plurality of selection circuits among the plurality of memory cells by a signal output from the driver circuit.

REFERENCES:
patent: 5726930 (1998-03-01), Hasegawa et al.
patent: 5737275 (1998-04-01), Matthews et al.
patent: 6269047 (2001-07-01), Kohno
patent: 2002/0153844 (2002-10-01), Koyama
patent: 2004/0246765 (2004-12-01), Kato
patent: 1 063 630 (2000-12-01), None
patent: 2001-005426 (2001-01-01), None

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