Memory transistor with multiple charge storing layers and a...

Details Memory transistor with multiple charge storing layers and a... Memory transistor with multiple charge storing layers and a...

2008-05-13

2011-11-22

Ngo, Ngan (Department: 2893)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S325000, C257SE29132, C257SE29309

Reexamination Certificate

active

08063434

ABSTRACT:
An embodiment of a semiconductor device includes a non-volatile memory transistor including an oxide-nitride-oxide (ONO) dielectric stack on a surface of a semiconductor substrate, the ONO dielectric stack comprising a multilayer charge storage layer including a silicon-rich, oxygen-lean top silicon oxynitride layer and a silicon-rich, oxygen-rich bottom silicon oxynitride layer, and a metal oxide semiconductor (MOS) logic transistor including a gate oxide and a high work function gate electrode.

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