Memory transistor having increased interelectrode capacitance

Details Memory transistor having increased interelectrode capacitance Memory transistor having increased interelectrode capacitance

1993-07-06

1995-01-03

Jackson, Jerome

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257332, 257532, 257314, H01L 2968, H01L 2978

Patent

active

053789105

ABSTRACT:
A semiconductor memory device employing an element separating film, a conductive film, and an insulating film structure formed on a semiconductor substrate in this order. First side wall members are provided on the side surfaces of the element separating film, of the conductive film, and of the insulating film structure. A first gate electrode is formed on the insulating film structure, on the first side wall members, and on a first gate insulating film structure provided on the semiconductor substrate, adjacent to the first side wall members. A second gate insulating film structure is formed on the first gate electrode. Second side wall members are formed on the side surfaces of the second gate insulating film structure and of the first gate electrode. Contact holes are formed in the insulating film structure in a self-alignment manner by virtue of the second side wall members. A second gate electrode is formed on the inner peripheral surfaces of the contact holes, on the second side wall members, and on the second gate insulating film structure, such that the second gate electrode is connected to the conductive film through the contact holes.

REFERENCES:
patent: 4618876 (1986-10-01), Stewart et al.

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