Static information storage and retrieval – Read/write circuit – Data refresh
Reexamination Certificate
2011-06-28
2011-06-28
Luu, Pho M (Department: 2824)
Static information storage and retrieval
Read/write circuit
Data refresh
C365S195000, C365S196000, C365S230030, C365S230060, C365S230080
Reexamination Certificate
active
07969807
ABSTRACT:
A memory including an array of memory cells and a control circuit. The control circuit is configured to control partial array self refreshes and to switch from one partial array self refresh to another partial array self refresh. Data in memory cells that are refreshed via the one partial array self refresh and refreshed via the other partial array self refresh is retained in the memory cells from before a first switch from the one partial array self refresh to the other partial array self refresh to after the first switch.
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Aquil Farrukh
Hokenmaier Wolfgang
Loeffler Steffen
Bui Tha-O
Dicke Billig & Czaja, PLLC
Luu Pho M
Qimonda AG
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