Static information storage and retrieval – Systems using particular element – Ferroelectric
Reexamination Certificate
2008-07-08
2008-07-08
Mai, Son L (Department: 2827)
Static information storage and retrieval
Systems using particular element
Ferroelectric
C365S185330, C711S103000
Reexamination Certificate
active
07397686
ABSTRACT:
A memory system includes a ferroelectric memory formed by arranging a plurality of memory cells having a ferroelectric capacitor and cell transistor, a flash EEPROM formed by arranging a plurality of memory cells having a floating gate and capable of electrically erasing and writing data, a control circuit configured to control the ferroelectric memory and flash EEPROM, and an interface circuit configured to communicate with the outside. The flash EEPROM stores data. The ferroelectric memory stores at least one of root information for storing the data, directory information, the file name of the data, the file size of the data, file allocation table information storing the storage location of the data, and the write completion time of the data.
REFERENCES:
patent: 6484270 (2002-11-01), Odani
patent: 6772233 (2004-08-01), Iida et al.
patent: 7103718 (2006-09-01), Nickel et al.
patent: 7193923 (2007-03-01), Nishihara et al.
patent: 7248493 (2007-07-01), Takashima et al.
patent: 2005/0041453 (2005-02-01), Brazis et al.
patent: 2005/0050261 (2005-03-01), Roehr et al.
patent: 2006/0087893 (2006-04-01), Nishihara et al.
patent: 2006/0274565 (2006-12-01), Takashima et al.
patent: 2007/0016719 (2007-01-01), Ono et al.
patent: 2007/0162699 (2007-07-01), Sohn et al.
patent: 10-255483 (1998-09-01), None
patent: 11-177036 (1999-07-01), None
patent: 2000-22010 (2000-01-01), None
patent: 2005-209324 (2005-08-01), None
Fujii Shuso
Suda Takaya
Sukegawa Hiroshi
Takashima Daisaburo
Kabushiki Kaisha Toshiba
Mai Son L
Oblon & Spivak, McClelland, Maier & Neustadt P.C.
LandOfFree
Memory system combining flash EEPROM and FeRAM does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Memory system combining flash EEPROM and FeRAM, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Memory system combining flash EEPROM and FeRAM will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2805960