Memory system and programming method thereof

Details Memory system and programming method thereof Memory system and programming method thereof

2010-01-15

2011-11-15

Nguyen, Tuan T. (Department: 2824)

Static information storage and retrieval

Floating gate

Particular biasing

C365S185220, C365S189090

Reexamination Certificate

active

08059466

ABSTRACT:
Provided are a non-volatile memory system and a programming method thereof. The programming method of the non-volatile memory system includes adjusting a program-verify-voltage of a selected memory cell referring to program data to be written in an interfering cell configured to provide interference for the selected memory cell and programming the selected memory cell depending on the adjusted program-verify-voltage.

REFERENCES:
patent: 6552929 (2003-04-01), Parker
patent: 7466598 (2008-12-01), Park
patent: 2007/0189073 (2007-08-01), Aritome
patent: 2008/0123407 (2008-05-01), Park
patent: 2008/0192544 (2008-08-01), Berman
patent: 2010/0321999 (2010-12-01), Yoo et al.
patent: 2005-025898 (2005-01-01), None
patent: 10-0769776 (2007-10-01), None
patent: 10-2008-0030253 (2008-04-01), None

Affiliated with

Also associated with

Rating

Memory system and programming method thereof does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Memory system and programming method thereof, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Memory system and programming method thereof will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4305312