Static information storage and retrieval – Read/write circuit – Signals
Reexamination Certificate
2005-11-04
2008-11-11
Luu, Pho M. (Department: 2824)
Static information storage and retrieval
Read/write circuit
Signals
C365S189050, C365S189080, C365S191000
Reexamination Certificate
active
07450441
ABSTRACT:
The memory system, memory device, memory controller and method may have a reduced power consumption. The memory system, memory device, memory controller and method may transition a data strobe signal to a valid logic level during a standby state. The valid logic level may be less than a logic level associated with a higher impedance level, such as when a bus may be turned off or connected to a ground voltage. A delay locked circuit need not be used in the memory device.
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Harness Dickey & Pierce PLC
Luu Pho M.
Samsung Electronics Co Ltd
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