Memory sub-word line driver operated by unboosted voltage

Details Memory sub-word line driver operated by unboosted voltage Memory sub-word line driver operated by unboosted voltage

1997-08-21

1999-08-17

Mai, Son

Static information storage and retrieval

Addressing

Particular decoder or driver circuit

36518909, G11C 800

Patent

active

059403438

ABSTRACT:
A semiconductor memory device includes a sub-wordline and a bit line connected to a memory cell, a sub-wordline driver for signaling the sub-wordline, and a main word decoder and a sub-word decoder, for selecting the sub-wordline driver in response to an external input address signal, wherein the wordline driver includes an NMOS transistor switch connected between a main wordline which is an output of the main word decoder and the sub-wordline, and wherein the logic "high" voltage level of a first control signal which controls the switch is lower than that of a signal output to the sub-wordline. The semiconductor memory device having the sub-wordline driver allows the internal power supply voltage to be used as the power supply voltage of the main word decoder. Accordingly, the reliability of a gate oxide film of a transistor constituting the main word decoder is improved, which lengthens the life of the semiconductor memory device.

REFERENCES:
patent: 5416747 (1995-05-01), Ohira
patent: 5519665 (1996-05-01), Chishiki
patent: 5652731 (1997-07-01), Saeki

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