Memory structures and methods of making same

Details Memory structures and methods of making same Memory structures and methods of making same

1999-04-14

2000-06-06

Le, Vu A.

Static information storage and retrieval

Systems using particular element

Amorphous

365148, 365153, G11C 1100

Patent

active

060727160

ABSTRACT:
Electrically erasable and rewritable memory structures with reversible states and good retention times may be constructed on flexible substrates using simple room-temperature deposition (e.g., printing) processes and curing temperatures below 110.degree. C. The memory structures are based on a polymer matrix having dispersed therein a particulate conductive or semiconductive material. When electrodes of suitable composition and geometry are used to apply electrical pulses of opposite polarity to the matrix material, reversible memory switching behavior is observed. In particular, subjection to positive or negative voltage pulses causes the devices to make fully-reversible transitions between low-resistance and high-resistance states.

REFERENCES:
patent: 5363329 (1994-11-01), Troyan
patent: 5920788 (1999-07-01), Reinberg
K.C. Park and S. Basavaiah, Proceedings of the Symposium on Semiconductor Effects in Amorphous Solids, pp. 284-333 (1970).
P.O. Sliva, G. Dir, and C. Griffiths, Proceedings of the Symposium on Semiconductor Effects in Amorphous Solids, pp. 316-333 (1970).
D.P. Oxley, "Memory Effects in Oxide Films", Oxides and Oxide Films, The Anodic Behavior of Metals and Semiconductors Series, vol. 6, pp. 251-322 (1981).
J.R. Heath, P.J. Kuekes, G.S. Snider, and R.S. Williams, "A Defect-Tolerant Computer Architecture: Opportunities for Nanotechnology," Science, vol. 280, pp. 1716-1721 (1998).

Affiliated with

Also associated with

Rating

Memory structures and methods of making same does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Memory structures and methods of making same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Memory structures and methods of making same will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2219554