Memory structure, programming method and reading method...

Details Memory structure, programming method and reading method... Memory structure, programming method and reading method...

2006-11-21

2008-10-28

Tran, Michael T (Department: 2827)

Static information storage and retrieval

Read/write circuit

Differential sensing

C365S226000

Reexamination Certificate

active

07443753

ABSTRACT:
The memory structure improves a sensing accuracy of memory cells by dividing the main array into a number of memory units and sensing memory cells of each memory units with an appropriate set of reference currents. Each of the memory units corresponds to a reference group bit value, which indicates the appropriate set of reference currents. The appropriate set of reference currents is chosen from a number of sets of selective reference currents according to the threshold voltage distribution of each of the memory units. Thus each of the memory units of the memory structure of the present invention is sensed with its own appropriate set of reference currents correctly, and the improvement of sensing accuracy is therefore achieved.

REFERENCES:
patent: 6462986 (2002-10-01), Khan
patent: 2002/0101778 (2002-08-01), Khan
patent: 2006/0274581 (2006-12-01), Redaelli et al.
patent: 2006/0279996 (2006-12-01), Yu et al.

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