Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-02-12
2009-12-01
Jackson, Jr., Jerome (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S330000, C257SE27086
Reexamination Certificate
active
07626223
ABSTRACT:
Methods of reducing the floating body effect in vertical transistors are disclosed. The floating body effect occurs when an active region in a pillar is cut off from the substrate by a depletion region and the accompanying electrostatic potential created. In a preferred embodiment, a word line is recessed into the substrate to tie the upper active region to the substrate. The resulting memory cells are preferably used in dynamic random access memory (DRAM) devices.
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Budd Paul A
Jackson, Jr. Jerome
Knobbe Martens Olson & Bear LLP
Micro)n Technology, Inc.
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