Memory sensing circuit and method for low voltage operation

Details Memory sensing circuit and method for low voltage operation Memory sensing circuit and method for low voltage operation

2006-05-16

2006-05-16

Lam, David (Department: 2827)

Static information storage and retrieval

Read/write circuit

Differential sensing

C365S149000, C365S203000, C365S233100

Reexamination Certificate

active

07046568

ABSTRACT:
A sensing module operates with a sense amplifier sensing a conduction current of a memory cell via a coupled bit line under constant voltage condition in order to minimize bit-line to bit-line coupling. The rate of discharge of a dedicated capacitor as measured by a change in the voltage drop there across in a predetermined period is used to indicate the magnitude of the conduction current. The voltage cannot drop below a minimum level imposed by a circuit for maintaining the constant voltage condition on the bit line. A voltage shifter is used to boost the voltage during the discharge and to unboost the voltage after the discharge, so that the change in voltage drop properly reflects the rate of discharge without running into the minimum level.

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