Memory self-reference read and write assist methods

Details Memory self-reference read and write assist methods Memory self-reference read and write assist methods

2010-08-27

2011-10-25

Le, Thong Q (Department: 2827)

Static information storage and retrieval

Systems using particular element

Magnetic thin film

C365S100000, C365S097000, C365S148000, C365S189070

Reexamination Certificate

active

08045370

ABSTRACT:
A magnetic tunnel junction memory apparatus and self-reference read and write assist schemes are described. One method of self-reference reading a magnetic tunnel junction memory unit includes applying a first read current through a magnetic tunnel junction data cell to form a first bit line read voltage, then applying a first magnetic field through the magnetic tunnel junction data cell forming a magnetic field modified magnetic tunnel junction data cell, and then applying a second read current thorough the magnetic field modified magnetic tunnel junction data cell to form a second bit line read voltage. The first read current being less than the second read current. Then comparing the first bit line read voltage with the second bit line read voltage to determine whether the magnetic tunnel junction data cell was in a high resistance state or a low resistance state. Methods of applying a magnetic field to the MTJ and then writing the desired resistance state are also disclosed.

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