Error detection/correction and fault detection/recovery – Pulse or data error handling – Replacement of memory spare location – portion – or segment
Reexamination Certificate
2011-05-24
2011-05-24
Tu, Christine T (Department: 2117)
Error detection/correction and fault detection/recovery
Pulse or data error handling
Replacement of memory spare location, portion, or segment
C714S723000, C365S200000, C365S201000
Reexamination Certificate
active
07949908
ABSTRACT:
A self-repairing memory system includes memory including memory elements and redundant memory elements. The memory elements include a plurality of memory cells. A memory repair module identifies non-operational memory cells and selects at least one memory element including the non-operational memory cells. A first repair sub-circuit soft repairs the memory by substituting the selected memory elements with the redundant memory elements. A second repair sub-circuit hard repairs the memory based on the substitutions.
REFERENCES:
patent: 5631868 (1997-05-01), Termullo et al.
patent: 6728910 (2004-04-01), Huang
patent: 7260758 (2007-08-01), Agrawal et al.
patent: 7437626 (2008-10-01), Chang et al.
Kawagoe, Tomoya et al; “A Built-In Self-Repair Analyzer (CRESTA) for embedded DRAMs”; ITC International Test Conference; Jan. 2000; pp. 567-574.
Ohler, Philipp et al; “An Integrated Built-In Test and Repair Approach for Memories with 2D Redundancy”; Proceedings 12thIEEE European Test Symposium, Freiburg, Germany, May 2007; 6 pages.
Ohler, Philipp et al; “Analyzing Test and Repair Times for 2D Integrated Memory Built-In Test and Repair”; Proceedings 10thIEEE Workshop on Design and Diagnostics of Electronic Circuits and Systems, Krakow, Poland, Apr. 2007; 6 pages.
Shoukourian, Samvel et al; “SoC Yield Optimization via an Embedded-Memory Test and Repair Infrastructure”; IEEE Design & Test of Computers; May-Jun. 2004; cover page and pp. 200-207.
Haviv Yosef
Levi Michael
Solt Yosef
Yoel Reshef Bar
Marvell Israel (M.I.S.L) Ltd.
Tu Christine T
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