Static information storage and retrieval – Read/write circuit – Bad bit
Reexamination Certificate
2008-12-29
2010-10-05
Lam, David (Department: 2827)
Static information storage and retrieval
Read/write circuit
Bad bit
C365S230020, C365S230030, C365S230060
Reexamination Certificate
active
07808847
ABSTRACT:
The present invention relates to a memory repair circuit and a repairable pseudo-dual port static random access memory (pseudo-dual port SRAM). The memory repair circuit uses fewer redundant column blocks and stores a few failed block addresses to reduce the required complexity of decoding the redundant column blocks. Thus, the present invention can reduce a layout area required by redundant memory cells.
REFERENCES:
patent: 5257229 (1993-10-01), McClure et al.
patent: 7173867 (2007-02-01), Terzioglu
patent: 7590015 (2009-09-01), Kodaira et al.
Wang Szu-Mien
Yang Dan-Chi
Lam David
Muncy Geissler Olds & Lowe, PLLC
Orise Technology Co., Ltd.
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