Memory repair circuit and repairable pseudo-dual port static...

Static information storage and retrieval – Read/write circuit – Bad bit

Reexamination Certificate

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Details

C365S230020, C365S230030, C365S230060

Reexamination Certificate

active

07808847

ABSTRACT:
The present invention relates to a memory repair circuit and a repairable pseudo-dual port static random access memory (pseudo-dual port SRAM). The memory repair circuit uses fewer redundant column blocks and stores a few failed block addresses to reduce the required complexity of decoding the redundant column blocks. Thus, the present invention can reduce a layout area required by redundant memory cells.

REFERENCES:
patent: 5257229 (1993-10-01), McClure et al.
patent: 7173867 (2007-02-01), Terzioglu
patent: 7590015 (2009-09-01), Kodaira et al.

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