Static information storage and retrieval – Read/write circuit – Particular read circuit
Reexamination Certificate
2008-07-23
2010-11-02
Nguyen, Viet Q (Department: 2827)
Static information storage and retrieval
Read/write circuit
Particular read circuit
C365S191000, C365S193000, C365S194000, C365S233100
Reexamination Certificate
active
07826281
ABSTRACT:
A DQS detection circuit13detects a preamble of a DQS signal outputted from RAM11. An up/down counter14counts up a number of clock signals CLK) in a period when an DQSEIN signal showing a continuation length of the DQS signal is active, counts down a number of trailing edges of the DQS signal after the preamble corresponding to a data read request, and detects that a counted value is set to 0. A flip-flop circuit FF2makes a mask signal MS) a low level when the counted value is set to 0. An AND circuit AND2makes the DQS signal maskable with a mask signal MS.
REFERENCES:
patent: 6680869 (2004-01-01), Sonoda et al.
patent: 6795906 (2004-09-01), Matsuda
patent: 6807613 (2004-10-01), Keeth et al.
patent: 6918016 (2005-07-01), Magro
patent: 7038953 (2006-05-01), Aoki
patent: 7042799 (2006-05-01), Cho
patent: 7266022 (2007-09-01), Aoki
patent: 7480197 (2009-01-01), Carnevale et al.
patent: 2005/0213396 (2005-09-01), Aoki
patent: 2006/0221088 (2006-10-01), Aoki
patent: 2005-276396 (2005-10-01), None
patent: 2006-260322 (2006-09-01), None
McGinn IP Law Group PLLC
NEC Electronics Corporation
Nguyen Viet Q
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