Static information storage and retrieval – Read/write circuit – Including level shift or pull-up circuit
Patent
1997-05-21
1998-10-27
Hoang, Huan
Static information storage and retrieval
Read/write circuit
Including level shift or pull-up circuit
36518518, 365226, G11C 700, G11C 1604
Patent
active
058286071
ABSTRACT:
A circuit and method modify data stored in a storage element (30) of a memory circuit (110) when high voltages used for such modification exceed transistor breakdowns. A charge pump (302) produces a pumped voltage (V.sub.P1) for modifying the data. A monitor circuit (304) produces an enable signal (V.sub.PEN) to activate other power supply voltages when the pumped voltage reaches a predetermined voltage level for allowing the data to be modified. A routing circuit (832) selects between the pumped voltage and a first voltage (V.sub.DD) in response to a first control signal (HVENABLEP) to produce a selected voltage. A switching circuit (802-808) passes the selected voltage to the storage element (30) to modify the data when the first supply voltage is selected by the routing circuit.
REFERENCES:
patent: 5557568 (1996-09-01), Miyamoto et al.
patent: 5600592 (1997-02-01), Atsumi et al.
patent: 5617359 (1997-04-01), Ninomiya
patent: 5619449 (1997-04-01), McIntyre
patent: 5663907 (1997-09-01), Frayer et al.
patent: 5666309 (1997-09-01), Peng et al.
K. Sawada et al., Nippon Steel Corporation, "An On-Chip High-Voltage Generator Circuit for EEPROMs with a Power Supply Voltage Below 2V", 1995 Symposium on VLSI Circuits Digest of Technical Papers, pp. 75-76.
Bushey Thomas P.
Caravella James S.
Moore Jeremy W.
Atkins Robert D.
Hightower Robert F.
Hoang Huan
Motorola Inc.
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