Memory precharge scheme using spare column

Static information storage and retrieval – Read/write circuit – Bad bit

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36518905, 371 102, G11C 700

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active

055329659

ABSTRACT:
Performance is improved for a memory array composed of storage elements which require a preconditioning operation prior to writing new data or rewriting old data. At least one spare column of memory elements is provided. The spare column is preconditioned during a time when it is not used for data storage. During a write operation to a memory address, data are written into the preconditioned spare column instead of the column associated with the memory address. The memory address is reassociated with the spare column, and the column with which it was previously associated becomes a new spare column which is preconditioned during restore and made ready for use during a subsequent memory access. In this way time for the preconditioning operation is hidden, and no delay for preconditioning is incurred. A plurality of spare columns allows each spare column to be preconditioned during a plurality of memory cycles.

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Aoki et al., "A 1.5V DRAM for Battery Based Applications", IEEE Journal of Solid State Physics, vol. 24, No. 5, pp. 1206-1212, Oct. 1989.
Kenney, "Low Charge Consumption Memory", U.S. Patent Application Serial No. 08/216,611, filed Mar. 23, 1994.
Fitzgerald et al., "Circuit Implementation of Fusible Redundant Addresses on RAMs for Productivity Enhancement", IBM J. of Res. & Dev., vol. 24, No. 3, pp. 291-298, May 1980.

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