Memory operation testing

Details Memory operation testing Memory operation testing

2008-06-30

2010-12-14

Nguyen, Van Thu (Department: 2824)

Static information storage and retrieval

Read/write circuit

Testing

C365S200000, C365S226000, C365S227000, C365S205000, C365S207000, C365S189110, C365S189120

Reexamination Certificate

active

07852692

ABSTRACT:
Test circuitry for determining whether a memory can operate at a lower operating voltage. The test circuitry includes a sense circuit having a delayed sensing characteristic as compared to other sense amplifier circuits of the memory. With this circuitry, the test circuitry can determine if the sense circuit can provide valid data under more severe sensing conditions. In one example, the sense circuit includes a delay circuit in the sense enable signal path. If sense circuit can provide data at more server operating conditions, then the memory operating voltage can be lowered.

REFERENCES:
patent: 5428574 (1995-06-01), Kuo et al.
patent: 6067263 (2000-05-01), Brady
patent: 6259640 (2001-07-01), Endo et al.
patent: 6483156 (2002-11-01), Adkisson et al.
patent: 6862233 (2005-03-01), Laurent
patent: 7193901 (2007-03-01), Ruby et al.
patent: 2007/0152734 (2007-07-01), Senthinathan et al.
patent: 2007/0220388 (2007-09-01), Quereshi et al.
Wang, et al., Canary Replica Feedback for Near-DRV Standby Vdd Scaling in a 90 nm SRAM, IEEE, 2007 Custom Integrated Circuits Conference (CICC).

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