Memory modules with magnetoresistive elements and method of...

Static information storage and retrieval – Addressing – Multiple port access

Reexamination Certificate

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C365S158000, C365S230080

Reexamination Certificate

active

07123539

ABSTRACT:
A memory cell module comprises a memory cell array formed by memory cells of M columns×N rows. Each memory cell includes a magnetoresistive element or a magnetresistive element with a semiconductor element. A memory module comprises a first access means to access the memory cell array by a column direction and a second access means to access the memory cell array by a row direction. In this manner, data is read from a magnetoresistive memory module in both row and column directions.

REFERENCES:
patent: 5267185 (1993-11-01), Akabane et al.
patent: 5305258 (1994-04-01), Koshizuka
patent: 5515320 (1996-05-01), Miwa
patent: 5629922 (1997-05-01), Moodera et al.
patent: 5636093 (1997-06-01), Gijs et al.
patent: 5650958 (1997-07-01), Gallagher et al.
patent: 5844854 (1998-12-01), Lee
patent: 6055179 (2000-04-01), Koganei et al.
patent: 6353633 (2002-03-01), Her
patent: 6385122 (2002-05-01), Chang
patent: 6804771 (2004-10-01), Jung et al.
patent: A-61-246996 (1986-11-01), None
patent: A-64-059296 (1989-03-01), None
patent: A-01-151095 (1989-06-01), None
patent: A-04-263192 (1992-09-01), None
patent: A-05-109265 (1993-04-01), None
patent: 2001-084155 (2001-03-01), None
patent: A-2001-084155 (2001-03-01), None

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