Static information storage and retrieval – Read/write circuit – Plural use of terminal
Reexamination Certificate
2005-08-23
2005-08-23
Nguyen, VanThu (Department: 2824)
Static information storage and retrieval
Read/write circuit
Plural use of terminal
C365S158000
Reexamination Certificate
active
06934196
ABSTRACT:
A memory cell module comprises a memory cell array formed by memory cells of M columns×N rows. Each memory cell includes a magnetoresistive element or a magnetresistive element with a semiconductor element. A memory module comprises a first access means to access the memory cell array by a column direction and a second access means to access the memory cell array by a row direction. In this manner, data is read from a magnetoresistive memory module in both row and column directions.
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Chujoh Takeshi
Fujisaki Koichi
Nakajima Kentaro
Taniguchi Yasuhiro
Finnegan Henderson Farabow Garrett & Dunner L.L.P.
Kabushiki Kaisha Toshiba
Nguyen Van-Thu
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