Memory module with magnetoresistive elements and a method of...

Static information storage and retrieval – Read/write circuit – Plural use of terminal

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C365S158000

Reexamination Certificate

active

06934196

ABSTRACT:
A memory cell module comprises a memory cell array formed by memory cells of M columns×N rows. Each memory cell includes a magnetoresistive element or a magnetresistive element with a semiconductor element. A memory module comprises a first access means to access the memory cell array by a column direction and a second access means to access the memory cell array by a row direction. In this manner, data is read from a magnetoresistive memory module in both row and column directions.

REFERENCES:
patent: 5629922 (1997-05-01), Moodera et al.
patent: 5636093 (1997-06-01), Gijs et al.
patent: 5650958 (1997-07-01), Gallagher et al.
patent: 6055179 (2000-04-01), Koganei et al.
patent: 6385122 (2002-05-01), Chang
patent: 6804771 (2004-10-01), Jung et al.
patent: 2001-084155 (2001-03-01), None

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Memory module with magnetoresistive elements and a method of... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Memory module with magnetoresistive elements and a method of..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Memory module with magnetoresistive elements and a method of... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3460513

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.