Electrical computers and digital processing systems: memory – Storage accessing and control – Specific memory composition
Reexamination Certificate
2003-11-27
2009-11-03
Bragdon, Reginald G (Department: 2189)
Electrical computers and digital processing systems: memory
Storage accessing and control
Specific memory composition
C711S103000, C711S105000, C711S111000, C711S118000, C711S165000
Reexamination Certificate
active
07613880
ABSTRACT:
A memory system including large-capacity ROM and RAM in which high-speed reading and writing are enabled is provided. A memory system including a non-volatile memory (CHIP1), DRAM (CHIP3), a control circuit (CHIP2) and an information processing device (CHIP4) is configured. Data in FLASH is transferred to SRAM or DRAM in advance to speed up. Data transfer between the non-volatile memory (FLASH) and DRAM (CHIP3) can be performed in the background. The memory system including these plural chips is configured as a memory system module in which each chip is mutually laminated and each chip is wired via a ball grid array (BGA) and bonding wire between the chips. Data in FLASH can be read at the similar speed to that of DRAM by securing a region in which the data in FLASH can be copied in DRAM and transferring the data to DRAM in advance immediately after power is turned on or by a load instruction.
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Ayukawa Kazushige
Miura Seiji
Bragdon Reginald G
Gu Shawn X
Miles & Stockbridge P.C.
Renesas Technology Corp.
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