Static information storage and retrieval – Systems using particular element – Magnetostrictive or piezoelectric
Patent
1995-06-07
1997-09-30
Nguyen, Viet Q.
Static information storage and retrieval
Systems using particular element
Magnetostrictive or piezoelectric
365145, 365117, 428694, H01L 4308
Patent
active
056732201
ABSTRACT:
A composition of materials having ferromagnetic and piezoelectric properties is disclosed. In the preferred embodiment, the composition of materials comprises a first layer of Pb.sub.(1-x-y) Cd.sub.x Fe.sub.y and a second layer of Cr.sub.(1-z-w) Zn.sub.z Te.sub.w where x, y, z and w are values within the ranges of 0.38.ltoreq.x.ltoreq.0.042, 0.08.ltoreq.y.ltoreq.0.094, 0.38.ltoreq.z.ltoreq.0.41, 0.28.ltoreq.w.ltoreq.0.31, and 0.25.ltoreq.(1-z-w).ltoreq.0.32. Additionally, each of the layers contain the elements of Bi, O and S. A random-accessible, non-volatile memory built using the invented composition of materials is also disclosed. This memory provides for storing two independent bits of binary information in a single storage cell. Each cell comprises two orthogonal address lines formed on the opposite surface of a Si substrate, a composition of materials of the present invention formed over each of the address lines, and an electrode formed over each composition of materials. The data is stored electromagnetically and retrieved as a piezoelectric voltage.
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Kappa Numerics, Inc.
Nguyen Viet Q.
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