Static information storage and retrieval – Read/write circuit – Flip-flop used for sensing
Reexamination Certificate
2005-04-19
2005-04-19
Yoha, Connie C. (Department: 2818)
Static information storage and retrieval
Read/write circuit
Flip-flop used for sensing
C365S230010, C365S189050, C365S230030
Reexamination Certificate
active
06882588
ABSTRACT:
A memory macro includes a variable number of memory cell arrays and associated circuits, and peripheral circuit elements such as line drivers, power-source transistors, and power-source capacitors coupled to the associated circuits. Multiple peripheral circuit elements of one type are placed side by side in a certain direction, aligned in that direction with one or more memory cell arrays, and are coupled in parallel to the associated circuits of those memory cell arrays. The number of these peripheral circuit elements is selected according to the number of memory cell arrays aligned with them, so that electrical requirements can be met without unnecessary consumption of space or current.
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Oki Electric Industry Co. Ltd.
Volentine Francos & Whitt PLLC
Yoha Connie C.
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