Memory integrated circuit

Static information storage and retrieval – Read/write circuit – Differential sensing

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Details

357 23, 365174, G11C 1140

Patent

active

042989604

ABSTRACT:
A memory circuit suitable for large scale integration is disclosed. The memory circuit comprises a plurality of memory cells each including a gate transistor having a gate coupled to one of word lines and a drain coupled to one of digit lines and capacitor means coupled between a source of the gate transistor and a potential source, wherein the threshold voltage of the gate transistors is made smaller than that of logic transistors employed in peripheral circuits.

REFERENCES:
patent: 4052229 (1977-10-01), Pashley
patent: 4138740 (1979-02-01), Itoh

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