Static information storage and retrieval – Read/write circuit – Including reference or bias voltage generator
Reexamination Certificate
2004-06-24
2008-08-12
Dinh, Son (Department: 2824)
Static information storage and retrieval
Read/write circuit
Including reference or bias voltage generator
C365S145000, C365S189080
Reexamination Certificate
active
07411841
ABSTRACT:
A memory capable of inhibiting a non-selected cell from disturbance is provided. This memory comprises a bit line, a word line arranged to intersect with the bit line and first storage means connected between the bit line and the word line, for applying voltages of opposite directions to the first storage means of a non-selected memory cell by the same number of times or substantially applying no voltages throughout a read operation and a rewrite operation while varying a rewriting method with a case of reading first data by the read operation and with a case of reading second data by the read operation.
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Office Action for Korean Application No. 9-5-2005-045036166 mailed Sep. 12, 2005.
Dinh Son
McDermott Will & Emery LLP
Nguyen Hien N
Sanyo Electric Co,. Ltd.
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