memory having a trench type gate structure

Details memory having a trench type gate structure memory having a trench type gate structure

1998-01-30

1999-02-09

Jackspn, Jerome

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257334, 257390, H01L 2976

Patent

active

058698639

ABSTRACT:
A read-only memory (ROM) and method for manufacturing a ROM having trench-type gate regions and source/drain regions, wherein the trench-type gate regions are provided in a substrate. The ROM further includes an insulating layer for isolating the substrate from the source/drain regions so to prevent current leakage between the source/drain regions and the substrate and to reduce area required by components of the ROM, thereby increasing component integration. The ROM also comprises a checkerboard conductive layer having a plurality of parallel source/drain regions a plurality of parallel channel regions connected to the plurality of parallel source/drain regions, wherein the plurality of parallel source/drain regions and the plurality of parallel channel regions cross each other at right angle, while the source/drain regions and the trench-type gate regions are approximately parallel to each other.

REFERENCES:
patent: 4818717 (1989-04-01), Johnson et al.
patent: 5602049 (1997-02-01), Wen et al.
patent: 5668031 (1997-09-01), Hsue et al.

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