Static information storage and retrieval – Systems using particular element – Capacitors
Reexamination Certificate
2007-05-22
2007-05-22
Le, Vu A. (Department: 2824)
Static information storage and retrieval
Systems using particular element
Capacitors
C365S187000
Reexamination Certificate
active
10648939
ABSTRACT:
A memory cell includes: a charge storage element (e.g., capacitor); a switch constructed and arranged to selectively connect the charge storage element to a first data line, responsive to a first select signal; and a gain element having an input connected to receive a signal from the capacitor and constructed and arranged to selectively provide a corresponding output signal to a second data line, responsive to a second select signal. The switch can be a FET having a drain connected to the first data line, a source connected to the capacitor and a gate connected to the first select signal. The gain element can be a FET having a gate connected to the capacitor, a source connected to the second data line and a drain selectively connected to one of an upper power supply and a lower power supply. The switch can transfer a signal from the first data line onto the capacitor and can transfer a signal from the capacitor onto the first data line when selected by the first select signal. A two-dimensional array of such memory cells can be formed, wherein the first select signal and the second select signal orthogonally select cells, to facilitate matrix pivot operations and bit interleave/de-interleave operations. Also, a method of addressing an array of such memory cells can comprise: writing groups of bits linearly arrayed with respect to each other; and reading groups of bits linearly arrayed with respect to each other and orthogonally disposed to the groups of bits written.
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PCT/US2004/027818 International Search Report Aug. 26, 2005.
Analog Devices Inc.
Le Vu A.
Wolf Greenfield & Sacks P.C.
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