Memory function body, particle forming method therefor and,...

Details Memory function body, particle forming method therefor and,... Memory function body, particle forming method therefor and,...

2007-03-06

2007-03-06

Andujar, Leonardo (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S321000, C257S322000, C257S323000, C257S324000, C257S325000, C438S200000

Reexamination Certificate

active

10796963

ABSTRACT:
A memory function body has a medium interposed between a first conductor (e.g., a conductive substrate) and a second conductor (e.g., an electrode) and consisting of a first material (e.g., silicon oxide or silicon nitride). The medium contains particles. Each particle is covered with a second material (e.g., silver oxide) and formed of a third material (e.g., silver). The second material functions as a barrier against passage of electric charges, and the third material has a function of retaining electric charges. The third material is introduced into the medium by, for example, a negative ion implantation method.

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