Memory elements and methods of using the same

Details Memory elements and methods of using the same Memory elements and methods of using the same

2011-03-29

2011-03-29

Le, Vu A (Department: 2824)

Static information storage and retrieval

Systems using particular element

Semiconductive

C365S189160, C365S185240

Reexamination Certificate

active

07916531

ABSTRACT:
In a first aspect, a first apparatus is provided. The first apparatus is a memory element that includes (1) one or more MOSFETs each including a dielectric material having a dielectric constant of about 3.9 to about 25; and (2) control logic coupled to at least one of the one or more MOSFETs. The control logic is adapted to (a) cause the memory element to operate in a first mode to store data; and (b) cause the memory element to operate in a second mode to change a threshold voltage of at least one of the one or more MOSFETs from an original threshold voltage to a changed threshold voltage such that the changed threshold voltage affects data stored by the memory element when operated in the first mode. Numerous other aspects are provided.

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