Static information storage and retrieval – Systems using particular element – Amorphous
Reexamination Certificate
2007-06-28
2008-12-09
Phung, Anh (Department: 2824)
Static information storage and retrieval
Systems using particular element
Amorphous
Reexamination Certificate
active
07463512
ABSTRACT:
A memory device having a reduced-thickness phase change film is described along with methods for manufacture. The device includes an electrode element, in electrical contact with a phase change layer. The latter element is formed from a memory material having at least two solid phases. A top electrode element makes electrical contact with the phase change layer at a location remote from the contact location of the electrode element. This construction produces a current flow through the phase change element in which at least a portion thereof lies in a path transverse to the current flow path within the electrode element.
REFERENCES:
patent: 3271591 (1966-09-01), Ovshinsky
patent: 3530441 (1970-09-01), Ovshinsky
patent: 4599705 (1986-07-01), Holmberg et al.
patent: 4719594 (1988-01-01), Young et al.
patent: 4876220 (1989-10-01), Mohsen et al.
patent: 4959812 (1990-09-01), Momodomi et al.
patent: 5166096 (1992-11-01), Cote et al.
patent: 5166758 (1992-11-01), Ovshinsky et al.
patent: 5177567 (1993-01-01), Klersy et al.
patent: 5515488 (1996-05-01), Hoppe et al.
patent: 5534712 (1996-07-01), Ovshinsky et al.
patent: 5687112 (1997-11-01), Ovshinsky
patent: 5789277 (1998-08-01), Zahorik et al.
patent: 5789758 (1998-08-01), Reinberg
patent: 5814527 (1998-09-01), Wolstenholme et al.
patent: 5831276 (1998-11-01), Gonzalez et al.
patent: 5837564 (1998-11-01), Sandhu et al.
patent: 5869843 (1999-02-01), Harshfield
patent: 5879955 (1999-03-01), Gonzalez et al.
patent: 5920788 (1999-07-01), Reinberg
patent: 5952671 (1999-09-01), Reinberg et al.
patent: 5958358 (1999-09-01), Tenne et al.
patent: 5970336 (1999-10-01), Wolstenholme et al.
patent: 5985698 (1999-11-01), Gonzalez et al.
patent: 5998244 (1999-12-01), Wolstenholme et al.
patent: 6011725 (2000-01-01), Eitan et al.
patent: 6025220 (2000-02-01), Sandhu
patent: 6031287 (2000-02-01), Harshfield
patent: 6034882 (2000-03-01), Johnson et al.
patent: 6077674 (2000-06-01), Schleifer et al.
patent: 6077729 (2000-06-01), Harshfield
patent: 6087674 (2000-07-01), Ovshinsky et al.
patent: 6104038 (2000-08-01), Gonzalez et al.
patent: 6111264 (2000-08-01), Wolstenholme et al.
patent: 6114713 (2000-09-01), Zahorik
patent: 6117720 (2000-09-01), Harshfield
patent: 6147395 (2000-11-01), Gilgen
patent: 6150253 (2000-11-01), Doan et al.
patent: 6153890 (2000-11-01), Wolstenholme et al.
patent: 6177317 (2001-01-01), Huang et al.
patent: 6185122 (2001-02-01), Johnson et al.
patent: 6189582 (2001-02-01), Reinberg et al.
patent: 6236059 (2001-05-01), Wolstenholme et al.
patent: RE37259 (2001-07-01), Ovshinsky
patent: 6271090 (2001-08-01), Huang et al.
patent: 6280684 (2001-08-01), Yamada et al.
patent: 6287887 (2001-09-01), Gilgen
patent: 6314014 (2001-11-01), Lowrey et al.
patent: 6320786 (2001-11-01), Chang et al.
patent: 6339544 (2002-01-01), Chiang et al.
patent: 6351406 (2002-02-01), Johnson et al.
patent: 6380068 (2002-04-01), Jeng et al.
patent: 6420215 (2002-07-01), Knall et al.
patent: 6420216 (2002-07-01), Clevenger et al.
patent: 6420725 (2002-07-01), Harshfield
patent: 6423621 (2002-07-01), Doan et al.
patent: 6429064 (2002-08-01), Wicker
patent: 6462353 (2002-10-01), Gilgen
patent: 6483736 (2002-11-01), Johnson et al.
patent: 6487114 (2002-11-01), Jong et al.
patent: 6501111 (2002-12-01), Lowrey
patent: 6511867 (2003-01-01), Lowrey et al.
patent: 6512241 (2003-01-01), Lai
patent: 6514788 (2003-02-01), Quinn
patent: 6534781 (2003-03-01), Dennison
patent: 6545903 (2003-04-01), Wu
patent: 6555860 (2003-04-01), Lowrey et al.
patent: 6563156 (2003-05-01), Harshfield
patent: 6566700 (2003-05-01), Xu
patent: 6567293 (2003-05-01), Lowrey et al.
patent: 6579760 (2003-06-01), Lung et al.
patent: 6586761 (2003-07-01), Lowrey
patent: 6589714 (2003-07-01), Maimon et al.
patent: 6593176 (2003-07-01), Dennison
patent: 6597009 (2003-07-01), Wicker
patent: 6605527 (2003-08-01), Dennison et al.
patent: 6605821 (2003-08-01), Lee et al.
patent: 6607974 (2003-08-01), Harshfield
patent: 6613604 (2003-09-01), Maimon et al.
patent: 6617192 (2003-09-01), Lowrey et al.
patent: 6621095 (2003-09-01), Chiang et al.
patent: 6627530 (2003-09-01), Li et al.
patent: 6639849 (2003-10-01), Takahashi et al.
patent: 6673700 (2004-01-01), Dennison et al.
patent: 6744088 (2004-06-01), Dennison
patent: 6791102 (2004-09-01), Johnson et al.
patent: 6797979 (2004-09-01), Chiang et al.
patent: 6800504 (2004-10-01), Li et al.
patent: 6800563 (2004-10-01), Xu
patent: 6805563 (2004-10-01), Ohashi et al.
patent: 6815704 (2004-11-01), Chen
patent: 6830952 (2004-12-01), Lung et al.
patent: 6850432 (2005-02-01), Lu et al.
patent: 6859389 (2005-02-01), Idehara et al.
patent: 6861267 (2005-03-01), Xu et al.
patent: 6864500 (2005-03-01), Gilton
patent: 6864503 (2005-03-01), Lung et al.
patent: 6867638 (2005-03-01), Saiki et al.
patent: 6888750 (2005-05-01), Walker et al.
patent: 6894305 (2005-05-01), Yi et al.
patent: 6903362 (2005-06-01), Wyeth et al.
patent: 6909107 (2005-06-01), Rodgers et al.
patent: 6927410 (2005-08-01), Chen
patent: 6933516 (2005-08-01), Xu
patent: 6936840 (2005-08-01), Sun et al.
patent: 6937507 (2005-08-01), Chen
patent: 6992932 (2006-01-01), Cohen et al.
patent: 7023009 (2006-04-01), Kostylev et al.
patent: 7033856 (2006-04-01), Lung et al.
patent: 7042001 (2006-05-01), Kim et al.
patent: 7067865 (2006-06-01), Lung et al.
patent: 7126149 (2006-10-01), Iwasaki et al.
patent: 7132675 (2006-11-01), Gilton
patent: 7166533 (2007-01-01), Happ
patent: 7214958 (2007-05-01), Happ
patent: 7220983 (2007-05-01), Lung
patent: 2004/0051094 (2004-03-01), Ooishi
patent: 2005/0019975 (2005-01-01), Lee et al.
patent: 2005/0029502 (2005-02-01), Hudgens
patent: 2005/0093022 (2005-05-01), Lung
patent: 2005/0201182 (2005-09-01), Osada et al.
patent: 2005/0212024 (2005-09-01), Happ
patent: 2005/0215009 (2005-09-01), Cho
patent: 2005/0227496 (2005-10-01), Park et al.
patent: 2006/0108667 (2006-05-01), Lung
patent: 2006/0110878 (2006-05-01), Lung et al.
patent: 2006/0118913 (2006-06-01), Yi et al.
patent: 2006/0284157 (2006-12-01), Chen et al.
patent: 2006/0284158 (2006-12-01), Lung et al.
patent: 2006/0284214 (2006-12-01), Chen
patent: 2006/0284279 (2006-12-01), Lung et al.
patent: 2006/0286709 (2006-12-01), Lung et al.
patent: 2006/0286743 (2006-12-01), Lung et al.
patent: 2007/0030721 (2007-02-01), Segal et al.
patent: 2007/0108077 (2007-05-01), Lung et al.
patent: 2007/0108429 (2007-05-01), Lung
patent: 2007/0108430 (2007-05-01), Lung
patent: 2007/0108431 (2007-05-01), Chen et al.
patent: 2007/0109836 (2007-05-01), Lung
patent: 2007/0109843 (2007-05-01), Lung et al.
patent: 2007/0111429 (2007-05-01), Lung
patent: 2007/0115794 (2007-05-01), Lung
patent: 2007/0117315 (2007-05-01), Lai et al.
patent: 2007/0121363 (2007-05-01), Lung
patent: 2007/0121374 (2007-05-01), Lung et al.
patent: 2007/0126040 (2007-06-01), Lung
patent: 2007/0131922 (2007-06-01), Lung
patent: 2007/0131980 (2007-06-01), Lung
patent: 2007/0138458 (2007-06-01), Lung
patent: 2007/0147105 (2007-06-01), Lung et al.
patent: 2007/0154847 (2007-07-01), Chen et al.
patent: 2007/0155172 (2007-07-01), Lai et al.
patent: 2007/0158632 (2007-07-01), Ho
patent: 2007/0158633 (2007-07-01), Lai et al.
patent: 2007/0158645 (2007-07-01), Lung
patent: 2007/0158690 (2007-07-01), Ho et al.
patent: 2007/0158862 (2007-07-01), Lung
patent: 2007/0161186 (2007-07-01), Ho
patent: 2007/0173019 (2007-07-01), Ho et al.
patent: 2007/0173063 (2007-07-01), Lung
patent: 2007/0176261 (2007-08-01), Lung
patent: 2007/0274121 (2007-11-01), Lung et al.
patent: WO-00/79539 (2000-12-01), None
patent: WO-01/45108 (2001-06-01), None
Adler, David, “Amorphous-Semiconductor Devices,” Sci. Amer., vol. 236, pp. 36-48, May 1977.
Adler, D. et al., “Threshold Switching in Chalgenid-Glass Thin Films,” J. Appl/Phys 51(6), Jun. 1980, pp. 3289-3309.
Ahn, S.J. et al., “A Highly Manufacturable High Density Phase Change Memory og 64 Mb and Beyond,” IEEE IEDM 2004, pp. 907-910.
Axon Technologies Corporation paper: Technology Description, pp. 1-6.
Bedeschi, F. et al., “4-MB Mosfet-Selected Phase-Change Memory Experimental Chip,”
Byrne Harry W
Hayne Beffel & Wolfeld LLP
Macronix International Co. Ltd.
Phung Anh
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