Memory element with reduced-current phase change element

Static information storage and retrieval – Systems using particular element – Amorphous

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

Reexamination Certificate

active

07463512

ABSTRACT:
A memory device having a reduced-thickness phase change film is described along with methods for manufacture. The device includes an electrode element, in electrical contact with a phase change layer. The latter element is formed from a memory material having at least two solid phases. A top electrode element makes electrical contact with the phase change layer at a location remote from the contact location of the electrode element. This construction produces a current flow through the phase change element in which at least a portion thereof lies in a path transverse to the current flow path within the electrode element.

REFERENCES:
patent: 3271591 (1966-09-01), Ovshinsky
patent: 3530441 (1970-09-01), Ovshinsky
patent: 4599705 (1986-07-01), Holmberg et al.
patent: 4719594 (1988-01-01), Young et al.
patent: 4876220 (1989-10-01), Mohsen et al.
patent: 4959812 (1990-09-01), Momodomi et al.
patent: 5166096 (1992-11-01), Cote et al.
patent: 5166758 (1992-11-01), Ovshinsky et al.
patent: 5177567 (1993-01-01), Klersy et al.
patent: 5515488 (1996-05-01), Hoppe et al.
patent: 5534712 (1996-07-01), Ovshinsky et al.
patent: 5687112 (1997-11-01), Ovshinsky
patent: 5789277 (1998-08-01), Zahorik et al.
patent: 5789758 (1998-08-01), Reinberg
patent: 5814527 (1998-09-01), Wolstenholme et al.
patent: 5831276 (1998-11-01), Gonzalez et al.
patent: 5837564 (1998-11-01), Sandhu et al.
patent: 5869843 (1999-02-01), Harshfield
patent: 5879955 (1999-03-01), Gonzalez et al.
patent: 5920788 (1999-07-01), Reinberg
patent: 5952671 (1999-09-01), Reinberg et al.
patent: 5958358 (1999-09-01), Tenne et al.
patent: 5970336 (1999-10-01), Wolstenholme et al.
patent: 5985698 (1999-11-01), Gonzalez et al.
patent: 5998244 (1999-12-01), Wolstenholme et al.
patent: 6011725 (2000-01-01), Eitan et al.
patent: 6025220 (2000-02-01), Sandhu
patent: 6031287 (2000-02-01), Harshfield
patent: 6034882 (2000-03-01), Johnson et al.
patent: 6077674 (2000-06-01), Schleifer et al.
patent: 6077729 (2000-06-01), Harshfield
patent: 6087674 (2000-07-01), Ovshinsky et al.
patent: 6104038 (2000-08-01), Gonzalez et al.
patent: 6111264 (2000-08-01), Wolstenholme et al.
patent: 6114713 (2000-09-01), Zahorik
patent: 6117720 (2000-09-01), Harshfield
patent: 6147395 (2000-11-01), Gilgen
patent: 6150253 (2000-11-01), Doan et al.
patent: 6153890 (2000-11-01), Wolstenholme et al.
patent: 6177317 (2001-01-01), Huang et al.
patent: 6185122 (2001-02-01), Johnson et al.
patent: 6189582 (2001-02-01), Reinberg et al.
patent: 6236059 (2001-05-01), Wolstenholme et al.
patent: RE37259 (2001-07-01), Ovshinsky
patent: 6271090 (2001-08-01), Huang et al.
patent: 6280684 (2001-08-01), Yamada et al.
patent: 6287887 (2001-09-01), Gilgen
patent: 6314014 (2001-11-01), Lowrey et al.
patent: 6320786 (2001-11-01), Chang et al.
patent: 6339544 (2002-01-01), Chiang et al.
patent: 6351406 (2002-02-01), Johnson et al.
patent: 6380068 (2002-04-01), Jeng et al.
patent: 6420215 (2002-07-01), Knall et al.
patent: 6420216 (2002-07-01), Clevenger et al.
patent: 6420725 (2002-07-01), Harshfield
patent: 6423621 (2002-07-01), Doan et al.
patent: 6429064 (2002-08-01), Wicker
patent: 6462353 (2002-10-01), Gilgen
patent: 6483736 (2002-11-01), Johnson et al.
patent: 6487114 (2002-11-01), Jong et al.
patent: 6501111 (2002-12-01), Lowrey
patent: 6511867 (2003-01-01), Lowrey et al.
patent: 6512241 (2003-01-01), Lai
patent: 6514788 (2003-02-01), Quinn
patent: 6534781 (2003-03-01), Dennison
patent: 6545903 (2003-04-01), Wu
patent: 6555860 (2003-04-01), Lowrey et al.
patent: 6563156 (2003-05-01), Harshfield
patent: 6566700 (2003-05-01), Xu
patent: 6567293 (2003-05-01), Lowrey et al.
patent: 6579760 (2003-06-01), Lung et al.
patent: 6586761 (2003-07-01), Lowrey
patent: 6589714 (2003-07-01), Maimon et al.
patent: 6593176 (2003-07-01), Dennison
patent: 6597009 (2003-07-01), Wicker
patent: 6605527 (2003-08-01), Dennison et al.
patent: 6605821 (2003-08-01), Lee et al.
patent: 6607974 (2003-08-01), Harshfield
patent: 6613604 (2003-09-01), Maimon et al.
patent: 6617192 (2003-09-01), Lowrey et al.
patent: 6621095 (2003-09-01), Chiang et al.
patent: 6627530 (2003-09-01), Li et al.
patent: 6639849 (2003-10-01), Takahashi et al.
patent: 6673700 (2004-01-01), Dennison et al.
patent: 6744088 (2004-06-01), Dennison
patent: 6791102 (2004-09-01), Johnson et al.
patent: 6797979 (2004-09-01), Chiang et al.
patent: 6800504 (2004-10-01), Li et al.
patent: 6800563 (2004-10-01), Xu
patent: 6805563 (2004-10-01), Ohashi et al.
patent: 6815704 (2004-11-01), Chen
patent: 6830952 (2004-12-01), Lung et al.
patent: 6850432 (2005-02-01), Lu et al.
patent: 6859389 (2005-02-01), Idehara et al.
patent: 6861267 (2005-03-01), Xu et al.
patent: 6864500 (2005-03-01), Gilton
patent: 6864503 (2005-03-01), Lung et al.
patent: 6867638 (2005-03-01), Saiki et al.
patent: 6888750 (2005-05-01), Walker et al.
patent: 6894305 (2005-05-01), Yi et al.
patent: 6903362 (2005-06-01), Wyeth et al.
patent: 6909107 (2005-06-01), Rodgers et al.
patent: 6927410 (2005-08-01), Chen
patent: 6933516 (2005-08-01), Xu
patent: 6936840 (2005-08-01), Sun et al.
patent: 6937507 (2005-08-01), Chen
patent: 6992932 (2006-01-01), Cohen et al.
patent: 7023009 (2006-04-01), Kostylev et al.
patent: 7033856 (2006-04-01), Lung et al.
patent: 7042001 (2006-05-01), Kim et al.
patent: 7067865 (2006-06-01), Lung et al.
patent: 7126149 (2006-10-01), Iwasaki et al.
patent: 7132675 (2006-11-01), Gilton
patent: 7166533 (2007-01-01), Happ
patent: 7214958 (2007-05-01), Happ
patent: 7220983 (2007-05-01), Lung
patent: 2004/0051094 (2004-03-01), Ooishi
patent: 2005/0019975 (2005-01-01), Lee et al.
patent: 2005/0029502 (2005-02-01), Hudgens
patent: 2005/0093022 (2005-05-01), Lung
patent: 2005/0201182 (2005-09-01), Osada et al.
patent: 2005/0212024 (2005-09-01), Happ
patent: 2005/0215009 (2005-09-01), Cho
patent: 2005/0227496 (2005-10-01), Park et al.
patent: 2006/0108667 (2006-05-01), Lung
patent: 2006/0110878 (2006-05-01), Lung et al.
patent: 2006/0118913 (2006-06-01), Yi et al.
patent: 2006/0284157 (2006-12-01), Chen et al.
patent: 2006/0284158 (2006-12-01), Lung et al.
patent: 2006/0284214 (2006-12-01), Chen
patent: 2006/0284279 (2006-12-01), Lung et al.
patent: 2006/0286709 (2006-12-01), Lung et al.
patent: 2006/0286743 (2006-12-01), Lung et al.
patent: 2007/0030721 (2007-02-01), Segal et al.
patent: 2007/0108077 (2007-05-01), Lung et al.
patent: 2007/0108429 (2007-05-01), Lung
patent: 2007/0108430 (2007-05-01), Lung
patent: 2007/0108431 (2007-05-01), Chen et al.
patent: 2007/0109836 (2007-05-01), Lung
patent: 2007/0109843 (2007-05-01), Lung et al.
patent: 2007/0111429 (2007-05-01), Lung
patent: 2007/0115794 (2007-05-01), Lung
patent: 2007/0117315 (2007-05-01), Lai et al.
patent: 2007/0121363 (2007-05-01), Lung
patent: 2007/0121374 (2007-05-01), Lung et al.
patent: 2007/0126040 (2007-06-01), Lung
patent: 2007/0131922 (2007-06-01), Lung
patent: 2007/0131980 (2007-06-01), Lung
patent: 2007/0138458 (2007-06-01), Lung
patent: 2007/0147105 (2007-06-01), Lung et al.
patent: 2007/0154847 (2007-07-01), Chen et al.
patent: 2007/0155172 (2007-07-01), Lai et al.
patent: 2007/0158632 (2007-07-01), Ho
patent: 2007/0158633 (2007-07-01), Lai et al.
patent: 2007/0158645 (2007-07-01), Lung
patent: 2007/0158690 (2007-07-01), Ho et al.
patent: 2007/0158862 (2007-07-01), Lung
patent: 2007/0161186 (2007-07-01), Ho
patent: 2007/0173019 (2007-07-01), Ho et al.
patent: 2007/0173063 (2007-07-01), Lung
patent: 2007/0176261 (2007-08-01), Lung
patent: 2007/0274121 (2007-11-01), Lung et al.
patent: WO-00/79539 (2000-12-01), None
patent: WO-01/45108 (2001-06-01), None
Adler, David, “Amorphous-Semiconductor Devices,” Sci. Amer., vol. 236, pp. 36-48, May 1977.
Adler, D. et al., “Threshold Switching in Chalgenid-Glass Thin Films,” J. Appl/Phys 51(6), Jun. 1980, pp. 3289-3309.
Ahn, S.J. et al., “A Highly Manufacturable High Density Phase Change Memory og 64 Mb and Beyond,” IEEE IEDM 2004, pp. 907-910.
Axon Technologies Corporation paper: Technology Description, pp. 1-6.
Bedeschi, F. et al., “4-MB Mosfet-Selected Phase-Change Memory Experimental Chip,”

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Memory element with reduced-current phase change element does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Memory element with reduced-current phase change element, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Memory element with reduced-current phase change element will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-4034818

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.