Memory element with positive temperature coefficient layer

Details Memory element with positive temperature coefficient layer Memory element with positive temperature coefficient layer

2011-07-19

2011-07-19

Sofocleous, Alexander (Department: 2824)

Static information storage and retrieval

Systems using particular element

Resistive

C257S004000, C257SE45003, C365S163000, C438S382000

Reexamination Certificate

active

07983068

ABSTRACT:
An integrated circuit including a memory element and method for manufacturing the integrated circuit are described. In some embodiments, the memory element includes a switching layer that selectively switches between a low resistance state and a high resistance state, and a positive temperature coefficient layer in thermal contact with the switching layer, the positive temperature coefficient layer having a resistance that increases in response to an increase in temperature.

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