Static information storage and retrieval – Systems using particular element – Amorphous
Reexamination Certificate
2008-07-15
2008-07-15
Luu, Pho M. (Department: 2824)
Static information storage and retrieval
Systems using particular element
Amorphous
C365S154000, C365S185080
Reexamination Certificate
active
07400526
ABSTRACT:
A memory element comprises a resistance element having a first resistance value in a first state and a second resistance value in a second state, it being possible to convert the resistance element from the first state into the second state and from the second state into the first state and the first resistance value and the second resistance value being different, a current generating device, coupled to a first terminal of the resistance element, the current generating device being designed to generate a current with a first amplitude through the resistance element when a predetermined potential is present at a second terminal of the resistance element, in order to convert the resistance element into the first state for setting the first resistance value, or to generate a current with a second amplitude through the resistance element when the predetermined potential is present at the second terminal of the resistance element, in order to convert the resistance element into the second state for setting the second resistance value, the first resistance value representing a first memory state and the second resistance value representing a second memory state.
REFERENCES:
patent: 5787042 (1998-07-01), Morgan
patent: 5986925 (1999-11-01), Naji et al.
patent: 6956774 (2005-10-01), Lung et al.
patent: 2004/0125643 (2004-07-01), Kang et al.
patent: 2004/0141363 (2004-07-01), Ohtsuka et al.
patent: 2005/0117397 (2005-06-01), Morimoto
Agostino Pirovano, et al., Low-Field Amorphous State Resistance and Threshold Voltage Drift in Chalcogenide Materials, IEEE Transactions on Electronic Devices, vol. 51, No. 5, May 2004, pp. 714-719.
A. Redaelli, et al., Electronic Switching Effect and Phase-Change Transition in Chalcogenide Materials, IEEE Electron Device Letters, vol. 25, No. 10, Oct. 2004, pp. 684-686.
Berthold Joerg
Kund Michael
Niedermeier Thomas
Schoenauer Tim
Dicke Billig & Czaja, PLLC
Infineon - Technologies AG
Luu Pho M.
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