Memory element, memory read-out element and memory cell

Details Memory element, memory read-out element and memory cell Memory element, memory read-out element and memory cell

2008-07-15

2008-07-15

Luu, Pho M. (Department: 2824)

Static information storage and retrieval

Systems using particular element

Amorphous

C365S154000, C365S185080

Reexamination Certificate

active

07400526

ABSTRACT:
A memory element comprises a resistance element having a first resistance value in a first state and a second resistance value in a second state, it being possible to convert the resistance element from the first state into the second state and from the second state into the first state and the first resistance value and the second resistance value being different, a current generating device, coupled to a first terminal of the resistance element, the current generating device being designed to generate a current with a first amplitude through the resistance element when a predetermined potential is present at a second terminal of the resistance element, in order to convert the resistance element into the first state for setting the first resistance value, or to generate a current with a second amplitude through the resistance element when the predetermined potential is present at the second terminal of the resistance element, in order to convert the resistance element into the second state for setting the second resistance value, the first resistance value representing a first memory state and the second resistance value representing a second memory state.

REFERENCES:
patent: 5787042 (1998-07-01), Morgan
patent: 5986925 (1999-11-01), Naji et al.
patent: 6956774 (2005-10-01), Lung et al.
patent: 2004/0125643 (2004-07-01), Kang et al.
patent: 2004/0141363 (2004-07-01), Ohtsuka et al.
patent: 2005/0117397 (2005-06-01), Morimoto
Agostino Pirovano, et al., Low-Field Amorphous State Resistance and Threshold Voltage Drift in Chalcogenide Materials, IEEE Transactions on Electronic Devices, vol. 51, No. 5, May 2004, pp. 714-719.
A. Redaelli, et al., Electronic Switching Effect and Phase-Change Transition in Chalcogenide Materials, IEEE Electron Device Letters, vol. 25, No. 10, Oct. 2004, pp. 684-686.

Affiliated with

Also associated with

Rating

Memory element, memory read-out element and memory cell does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Memory element, memory read-out element and memory cell, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Memory element, memory read-out element and memory cell will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2812512