Static information storage and retrieval – Systems using particular element – Resistive
Reexamination Certificate
2005-12-06
2005-12-06
Ho, Hoai (Department: 2827)
Static information storage and retrieval
Systems using particular element
Resistive
C365S230030, C365S230060, C365S230080, C977S726000
Reexamination Certificate
active
06972985
ABSTRACT:
A memory including a memory element having islands is provided. The memory has address decoding circuitry and an array of memory plugs. The memory plugs include memory element that have island structures of a first material within the bulk of a second material. The island structures are typically nanoparticles. The memory plugs can be placed in a first resistive state at a first write voltage, placed in a second resistive state at a second write voltage, and have its resistive state determined at a read voltage.
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Chevallier Christophe J.
Hsia Steve Kuo-Ren
Longcor Steven W.
Rinerson Darrell
Sanchez, Jr. John E.
Ho Hoai
Malino Morgan
Pham Ly Duy
Unity Semiconductor Corporation
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