Memory element for information storage and retrieval system and

Details Memory element for information storage and retrieval system and Memory element for information storage and retrieval system and

1987-05-08

1989-01-24

Moffitt, James W.

Static information storage and retrieval

Radiant energy

Electron beam

365128, G11C 1172

Patent

active

048005266

ABSTRACT:
A memory element for an electron beam target comprising an electrically insulating support laminated to a conductive layer which, in turn, is laminated to a dielectric surface layer having a thickness less than 1 micrometer, e.g. 0.04-0.8 micrometer, a resistivity of at least 10.sup.16 ohm-cm and a dielectric strength of at least 10.sup.5 volts/cm; said dielectric surface layer comprising a material sensitive to electron beam irradiation and provided, essentially coplanar with its exposed surface, with focusing means or indicia in the form of shaped patterns that provide reference points for locating recording or retrieval points during electron beam exposure and scanning of the target surface.
Writing is accomplished by irradiating with an electron beam either to develop a charge pattern or to alter the state of polymerization of cross-linking or both in a prescribed pattern for transmitting data. Where polymerization or cross-linking is involved, the material is altered such that subsequent contact with a solvent selectively removes the material in the state of lesser polymerization, leaving behind permanent islands of the unremoved material. By assigning a given logical meaning to the permanent islands or to the charge stored in the dielectric layer, for example, a dual character code is provided such that digital data can be stored. The focusing means or indicia allow addresses to be located in the memory element with sufficient precision that in excess of 10.sup.8 bits/cm.sup.2 can be recorded and retrieved.

REFERENCES:
patent: 4065308 (1977-12-01), Bergen
patent: 4090253 (1978-05-01), Salso

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