Memory element and method for manufacturing same

Details Memory element and method for manufacturing same Memory element and method for manufacturing same

2011-01-25

2011-01-25

Le, Vu A (Department: 2824)

Static information storage and retrieval

Systems using particular element

Resistive

C365S174000, C365S138000, C257S154000, C257S359000, C257S746000, C257S218000

Reexamination Certificate

active

07876596

ABSTRACT:
A novel nonvolatile memory element, which can be manufactured by a simple and high yield process by using an organic material and has a high on/off ratio, and a method for manufacturing such nonvolatile memory element. A switching layer (14) made of an electrical insulating radical polymer is provided between an anode layer (12) and a cathode layer (16). Further, a hole injection transport layer (13) is provided between the switching layer (14) and the anode layer (12), and an electron injection transport layer (15), between the switching layer (14) and the cathode layer (16). An intermediate layer is provided between the switching layer and the adjacent layer. The radical polymer is preferably nitroxide radical polymer. The switching layer (14), the hole injection transport layer (13) and the electron injection transport layer (15) are formed by being stacked by a wet process.

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