Memory element and memory

Details Memory element and memory Memory element and memory

2007-05-08

2009-11-10

Pham, Ly D (Department: 2827)

Static information storage and retrieval

Systems using particular element

Magnetostrictive or piezoelectric

C365S066000, C365S158000, C365S171000, C365S172000, C365S173000

Reexamination Certificate

active

07616475

ABSTRACT:
A memory element including a memory layer that retains information based on a magnetization state of a magnetic material is provided. In the memory element, a magnetization pinned layer is provided for the memory layer through an intermediate layer, the intermediate layer is formed of an insulator, spin-polarized electrons are injected in a stacking direction to change a magnetization direction of the memory layer, so that information is recorded in the memory layer. Also, a ferromagnetic layer forming the memory layer has a magnetostriction constant of 1×10−5or more.

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