Static information storage and retrieval – Read/write circuit – Data refresh
Reexamination Certificate
2011-01-18
2011-01-18
Ho, Hoai V (Department: 2827)
Static information storage and retrieval
Read/write circuit
Data refresh
C365S185250, C365S207000, C365S185180
Reexamination Certificate
active
07872933
ABSTRACT:
This disclosure concerns a method of driving a memory including memory cells, bit lines, and word lines, each memory cell having a source, a drain, and a floating body, the method comprising performing a refresh operation for recovering deterioration of first logical data of the memory cells and deterioration of second logical data of the memory cells, wherein in the refresh operation, the number of the carriers injected into the floating body is larger than the number of the carriers discharged from the floating body when a potential at the floating body is larger than a critical value, and the number of the carriers injected into the floating body is smaller than the number of the carriers discharged from the floating body when the potential at the floating body is smaller than the critical value.
REFERENCES:
patent: 6982918 (2006-01-01), Fazan et al.
patent: 7170807 (2007-01-01), Fazan et al.
patent: 2008/0316849 (2008-12-01), Ohsawa
U.S. Appl. No. 12/352,876, filed Jan. 13, 2009, Higashi, et al.
P. Fazan, et al. “A new Block Refresh Concept for SOI Floating Body Memories”, IEEE, 2003, pp. 15-16.
Ho Hoai V
Kabushiki Kaisha Toshiba
Lappas Jason
Oblon, Spivak McClelland, Maier & Neustadt, L.L.P.
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