Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-09-16
2009-12-15
Rose, Kiesha L. (Department: 2891)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S040000, C257SE51002, C257SE51003, C257SE51023
Reexamination Certificate
active
07633129
ABSTRACT:
The present memory device includes first and second electrodes, an active layer and a passive layer, the active and passive layers being between the first and second electrodes, with either or both of the active layer and passive layer being made up a plurality of self-assembled sublayers.
REFERENCES:
patent: 4652894 (1987-03-01), Potember et al.
patent: 4780790 (1988-10-01), Takimoto et al.
patent: 4987023 (1991-01-01), Sato et al.
patent: 5185208 (1993-02-01), Yamashita et al.
patent: 5208111 (1993-05-01), Decher et al.
patent: 5518767 (1996-05-01), Rubner et al.
patent: 5536573 (1996-07-01), Rubner et al.
patent: 6324091 (2001-11-01), Gryko et al.
patent: 6447887 (2002-09-01), Claus et al.
patent: 6770905 (2004-08-01), Buynoski et al.
patent: 6773954 (2004-08-01), Subramanian et al.
patent: 6881444 (2005-04-01), Hong et al.
patent: 6955939 (2005-10-01), Lyons et al.
patent: 2002/0149809 (2002-10-01), Jackson
patent: 2003/0124368 (2003-07-01), Lynn et al.
patent: 2003/0173612 (2003-09-01), Krieger et al.
patent: 2004/0159835 (2004-08-01), Krieger et al.
patent: 2004/0183069 (2004-09-01), Afzali-Ardakani et al.
patent: 2006/0002168 (2006-01-01), Krieger et al.
Chen et al., Electronic Memory Effects in Self-Assembled Monolayer Systems, Physica E, vol. 16, 2003, pp. 17-23.
T. Cassagneau et al., Layer-byLayer Assembly of Thin Film Zener Diodes from Conducting Polymers and CdSe Nanoparticles, J. Am. Chem. Soc., vol. 120, pp. 7848-7859, 1998.
Kingsborough Richard
Shi Xiaobo
Gumedzoe Peniel M
Rose Kiesha L.
Spansion LLC
LandOfFree
Memory devices with active and passive layers having... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Memory devices with active and passive layers having..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Memory devices with active and passive layers having... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4070725