Memory devices with active and passive layers having...

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Reexamination Certificate

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C257S040000, C257SE51002, C257SE51003, C257SE51023

Reexamination Certificate

active

07633129

ABSTRACT:
The present memory device includes first and second electrodes, an active layer and a passive layer, the active and passive layers being between the first and second electrodes, with either or both of the active layer and passive layer being made up a plurality of self-assembled sublayers.

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