Memory devices, transistor devices and related methods

Details Memory devices, transistor devices and related methods Memory devices, transistor devices and related methods

2008-10-16

2011-11-29

Shingleton, Michael B (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S325000, C257S321000, C438S261000

Reexamination Certificate

active

08067803

ABSTRACT:
A memory device and method of making the memory device. The memory device comprises a storage transistor at a surface of a substrate. The storage transistor comprises a body portion between first and second source/drain regions, wherein the source/drain regions are regions of a first conductivity type. The storage transistor also comprises a gate structure that wraps at least partially around the body portion in at least two spatial planes. A bit line is connected to the first source/drain region and a word line is connected to the gate structure.

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