Memory devices having sharp-tipped phase change layer patterns

Details Memory devices having sharp-tipped phase change layer patterns Memory devices having sharp-tipped phase change layer patterns

2004-12-21

2009-02-10

Garber, Charles D. (Department: 2812)

Active solid-state devices (e.g., transistors, solid-state diode

Non-single crystal, or recrystallized, semiconductor...

Field effect device in non-single crystal, or...

C257SE29170, C257S069000

Reexamination Certificate

active

07488981

ABSTRACT:
Phase change Random Access Memory (PRAM) devices include a substrate and a phase change layer pattern on the substrate. The phase change layer pattern includes a sharp tip and at least one wall that extends from the sharp tip in a direction away from the substrate. At least one contact hole node is provided that contacts the phase change material pattern adjacent the sharp tip.

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Lee et al.,Phase Change Memory Devices Having Phase Change Area in Porous Dielectric Layer and Methods for Manufacturing the Same, U.S. Appl. No. 10/827,687, filed Apr. 19, 2004.
Hideki,Phase Changeable Memory Devices Including Carbon Nano Tubes and Methods for Forming the Same, U.S. Appl. No. 10/827,639, filed Apr. 19, 2004.

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