Memory devices having reduced coupling noise between wordlines

Details Memory devices having reduced coupling noise between wordlines Memory devices having reduced coupling noise between wordlines

2006-09-19

2006-09-19

Nguyen, Viet Q. (Department: 2827)

Static information storage and retrieval

Addressing

Particular decoder or driver circuit

C365S206000, C365S214000, C365S230040, C365S230020, C365S063000

Reexamination Certificate

active

07110319

ABSTRACT:
Memory devices configured to reduce coupling noise between adjacent wordlines in a memory array. More specifically, wordline drivers are interleaved such that adjacent wordlines are driven by wordline drivers enabled by different row decoders. Each wordline driver includes a weak transistor to ground and a strong transistor to ground. By disabling the wordline driver on the wordlines directly adjacent to the active wordlines, a path is provided to drive the coupling noise from the active wordline to ground through the strong transistor.

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