Non-volatile memory and fabricating method thereof

Details Non-volatile memory and fabricating method thereof Non-volatile memory and fabricating method thereof

2006-09-05

2006-09-05

Smith, Matthew (Department: 2823)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S330000, C257S332000, C257SE29129

Reexamination Certificate

active

07102193

ABSTRACT:
A method of fabricating a non-volatile memory is provided. A substrate having a trench therein for forming a trench device is provided. Then, a doped metal silicide layer is formed on the substrate in the trench. A heating process is performed to form a source/drain area in the substrate under the doped metal silicide layer. Thereafter, a first conductive layer is formed on the doped metal silicide layer to fill up the trench.

REFERENCES:
patent: 4929988 (1990-05-01), Yoshikawa

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