Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-04-05
2010-12-28
Luu, Chuong A. (Department: 2892)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S295000, C257S314000, C257S214000
Reexamination Certificate
active
07859036
ABSTRACT:
Memory devices having memory cells comprising variable resistance material include an electrode comprising a single nanowire. Various methods may be used to form such memory devices, and such methods may comprise establishing contact between one end of a single nanowire and a volume of variable resistance material in a memory cell. Electronic systems include such memory devices.
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Liu Jun
Violette Michael P.
Luu Chuong A.
Micro)n Technology, Inc.
TraskBritt
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