Semiconductor device manufacturing: process – Forming bipolar transistor by formation or alteration of... – Having heterojunction
Reexamination Certificate
2006-02-06
2009-12-01
Toledo, Fernando L (Department: 2895)
Semiconductor device manufacturing: process
Forming bipolar transistor by formation or alteration of...
Having heterojunction
C257S309000, C257S534000, C438S365000
Reexamination Certificate
active
07625803
ABSTRACT:
The invention includes a memory device having a capacitor in combination with a transistor. The memory device can be within a TFT construction. The capacitor is configured to provide both area and perimeter components of capacitance for capacitive enhancement. The capacitor includes a reference plate which splits into at least two prongs. Each of the prongs is surrounded by a lateral periphery. A dielectric material extends around the lateral peripheries of the prongs, and a storage node surrounds an entirety of the lateral peripheries of the prongs. The storage node is separated from the reference plate by at least the dielectric material. Also, the invention includes electronic systems comprising novel capacitor constructions.
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Diallo Mamadou
Micro)n Technology, Inc.
Toledo Fernando L
Wells St. John P.S.
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